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rf & protection devices data sheet revision 1.1, 2012-09-13 bfp650 high linearity silicon germani um bipolar rf transistor
edition 2012-09-13 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
bfp650 data sheet 3 revision 1.1, 2012-09-13 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 bfp650, high linearity silicon ge rmanium bipolar rf transistor revision history: 2012-09-13 , revision 1.1 page subjects (changes since previous revision) this data sheet replaces the revision from 2010-10-22. the product itself has not been changed and the device characteristics remain unchanged. only the product description and information available in the data sheet have been expanded and updated.
bfp650 table of contents data sheet 4 revision 1.1, 2012-09-13 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 general ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 frequency dependent ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.4 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.5 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 7 package information sot343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 table of contents
bfp650 list of figures data sheet 5 revision 1.1, 2012-09-13 figure 4-1 total power dissipation p tot = f ( t s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5-1 bfp650 testing circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter in a. . . . . . . . . . . . . 17 figure 5-3 dc current gain h fe = f ( i c ), v ce = 3 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 5-4 collector current vs. base emitter voltage i c = f ( v be ), v ce = 2 v. . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 18 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 19 figure 5-7 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter in v . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 5-8 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters . . . . . . . . . . . . . . . . . 20 figure 5-9 collector base capacitance c ccb = f ( v cb ), f = 1 mhz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-10 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 70 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-11 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . . 22 figure 5-12 maximum power gain g max = f ( v ce ), i c = 70 ma, f = parameter in ghz . . . . . . . . . . . . . . . . . . . 22 figure 5-13 input matching s 11 = f ( f ), v ce = 3 v, i c = 30 / 70 ma. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 5-14 source impedance for minimum noise figure opt = f ( f ), v ce = 3 v, i c = 30 / 70 ma . . . . . . . . . . . 23 figure 5-15 output matching s 22 = f ( f ), v ce = 3 v, i c = 30 / 70 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 5-16 noise figure nf min = f ( f ), v ce = 3 v, i c = 30 / 70 ma, z s = z opt . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 5-17 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt = parameter in ghz . . . . . . . . . . . . . . . . . . . . . . . 25 figure 5-18 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 25 figure 5-19 comparison noise figure nf 50 / nf min = f ( i c ), v ce = 3 v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . 26 figure 7-1 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 7-2 package footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 7-3 marking example (marking bfp650: r5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 7-4 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 list of figures
bfp650 list of tables data sheet 6 revision 1.1, 2012-09-13 table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4-1 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5-1 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-2 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-3 ac characteristics, v ce = 3 v, f = 150 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 5-4 ac characteristics, v ce = 3 v, f = 450 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-5 ac characteristics, v ce = 3 v, f = 900 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-6 ac characteristics, v ce = 3 v, f = 1.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-7 ac characteristics, v ce = 3 v, f = 1.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-8 ac characteristics, v ce = 3 v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 5-9 ac characteristics, v ce = 3 v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 5-10 ac characteristics, v ce = 3 v, f = 5.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 list of tables
bfp650 product brief data sheet 7 revision 1.1, 2012-09-13 1 product brief the bfp650 is a high linearity wideband npn bipolar rf tr ansistor. the device is based on infineon?s reliable high volume silicon germanium carbon (sig e:c) heterojunction bipolar techno logy. the collector design supports voltages up to v ceo = 4 v and currents up to i c = 150 ma. with its high linearity at currents as low as 30 ma the device supports energy efficient designs. the typical tr ansition frequency is approximately 42 ghz, hence the device offers high power gain at frequencies up to 5 ghz in amplifier applications. the device is housed in an easy to use plastic package with visible leads.
bfp650 features data sheet 8 revision 1.1, 2012-09-13 2 features application examples driver amplifier ? ism bands 434 and 868 mhz ? 1.9 ghz cordless phones ? catv lna transmitter driver amplifier ? 2.4 ghz wlan / bluetooth, 2.4 / 3.5 ghz wimax output stage lna for active antennas ? tv, gps, sdars ? 2.4 / 5 ghz wlan ? 2.4 / 3.5 / 5 ghz wimax, etc suitable for 5 - 10.5 ghz oscillators attention: esd (electrostatic discharge) sensitive device, observe handling precautions ? linear low noise driver amplifier for rf frontends up to 5 ghz based on infineons reliable, high volume sige:c wafer technology ? output compression point op 1db = 17 dbm at 70 ma, 3 v, 2.4 ghz, 50 ? system ? output 3rd order intermodulation point oip 3 = 30 dbm at 70 ma, 3 v, 2.4 ghz, 50 ? system ? maximum available gain g ma = 17.5 db at 70 ma, 3 v, 2.4 ghz ? minimum noise figure nf min = 1 db at 30 ma, 3 v, 2.4 ghz ? easy to use pb-free (rohs compliant) and halogen-free standard package with visible leads ? qualification report according to aec-q101 available product name package pin configuration marking bfp650 sot343 1 = b 2 = e 3 = c 4 = e r5s
bfp650 maximum ratings data sheet 9 revision 1.1, 2012-09-13 3 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ceo open base ?4.0v t a = 25 c ?3.7v t a = -55 c collector emitter voltage v ces ? 13 v e-b short circuited collector base voltage v cbo ? 13 v open emitter emitter base voltage v ebo ? 1.2 v open collector collector current i c ?150ma? base current i b ?10ma? total power dissipation 1) 1) t s is the soldering point temperature . t s is measured on the emitter lead at the soldering point of the pcb. p tot ?500mw t s 78 c junction temperature t j ?150c? storage temperature t stg -55 150 c ?
bfp650 thermal characteristics data sheet 10 revision 1.1, 2012-09-13 4 thermal characteristics figure 4-1 total power dissipation p tot = f ( t s ) table 4-1 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1)for the definition of r thjs please refer to application note an077 ( thermal resistance calculation) r thjs ?140?k/w? 0 25 50 75 100 125 150 0 100 200 300 400 500 600 t s [c] p tot [mw]
bfp650 electrical characteristics data sheet 11 revision 1.1, 2012-09-13 5 electrical characteristics 5.1 dc characteristics 5.2 general ac characteristics table 5-1 dc characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 44.5?v i c =3ma, i b =0 open base collector emitter leakage current i ces ?0.11 a v ce =13v, v be =0 ? 1 40 na v ce =5v, v be =0 e-b short circuited collector base leakage current i cbo ? 1 40 na v cb =5v, i e =0 open emitter emitter base leakage current i ebo ?10500na v eb =0.5v, i c =0 open collector dc current gain h fe 100 170 250 v ce =3v, i c =70ma pulse measured table 5-2 general ac characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. transition frequency f t 31 42 ? ghz v ce =3v, i c =70ma, f =1ghz collector base capacitance c cb ? 0.26 0.4 pf v cb =3v, v be =0v f =1mhz emitter grounded collector emitte r capacitance c ce ?0.45?pf v ce =3v, v be =0v f =1mhz base grounded emitter base capacitance c eb ?1.3?pf v eb =0.5v, v cb =0v f =1mhz collector grounded
bfp650 electrical characteristics data sheet 12 revision 1.1, 2012-09-13 5.3 frequency dependent ac characteristics measurement setup is a test fixture with bias t?s in a 50 ? system, t a = 25 c figure 5-1 bfp650 testing circuit table 5-3 ac characteristics, v ce = 3 v, f =150mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ms ?35.5? i c =30ma class a operation point g ms ?38? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?35? i c =30ma class a operation point s 21 ?37.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.75? i c =30ma associated gain g ass ?32? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?16.5? i c =70ma 3rd order intercept point oip 3 ?29.5? i c =70ma in out bias -t bias-t b (pin 1) e c e vc top view vb
bfp650 electrical characteristics data sheet 13 revision 1.1, 2012-09-13 table 5-4 ac characteristics, v ce = 3 v, f =450mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ms ?30? i c =30ma class a operation point g ms ?31.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?29? i c =30ma class a operation point s 21 ?29.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.75? i c =30ma associated gain g ass ?29.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?16.5? i c =70ma 3rd order intercept point oip 3 ?30? i c =70ma table 5-5 ac characteristics, v ce = 3 v, f =900mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ms ?25.5? i c =30ma class a operation point g ms ?26.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?23.5? i c =30ma class a operation point s 21 ?24? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.8? i c =30ma associated gain g ass ?24.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?31? i c =70ma
bfp650 electrical characteristics data sheet 14 revision 1.1, 2012-09-13 table 5-6 ac characteristics, v ce = 3 v, f = 1.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ms ?22? i c =30ma class a operation point g ms ?22.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?19? i c =30ma class a operation point s 21 ?19.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.85? i c =30ma associated gain g ass ?20.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?31? i c =70ma table 5-7 ac characteristics, v ce = 3 v, f = 1.9 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ma ?20.5? i c =30ma class a operation point g ms ?20? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?17? i c =30ma class a operation point s 21 ?17.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.95? i c =30ma associated gain g ass ?17.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?30.5? i c =70ma
bfp650 electrical characteristics data sheet 15 revision 1.1, 2012-09-13 table 5-8 ac characteristics, v ce = 3 v, f = 2.4 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ma ?18? i c =30ma class a operation point g ma ?17.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?14.5? i c =30ma class a operation point s 21 ?15? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?1? i c =30ma associated gain g ass ?15? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?30? i c =70ma table 5-9 ac characteristics, v ce = 3 v, f = 3.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ma ?14? i c =30ma class a operation point g ma ?14.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?11? i c =30ma class a operation point s 21 ?11.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?1.2? i c =30ma associated gain g ass ?11.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?30? i c =70ma
bfp650 electrical characteristics data sheet 16 revision 1.1, 2012-09-13 notes 1. ac parameter limits verified by random sampling. 2. in order to get the nf min values stated in this chapter the test fi xture losses have been subtracted from all measured result. 3. oip 3 value depends on termination of all intermodulat ion frequency components. termination used for this measurement is 50 ? from 0.2 mhz to 12 ghz. table 5-10 ac characteristics, v ce = 3 v, f = 5.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ma ?10.5? i c =30ma class a operation point g ma ?10.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?6.5? i c =30ma class a operation point s 21 ?7? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?1.6? i c =30ma associated gain g ass ?8.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?16.5? i c =70ma 3rd order intercept point oip 3 ?29.5? i c =70ma
bfp650 electrical characteristics data sheet 17 revision 1.1, 2012-09-13 5.4 characteristic dc diagrams figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter in a figure 5-3 dc current gain h fe = f ( i c ), v ce = 3 v 0 1 2 3 4 5 0 20 40 60 80 100 120 140 160 v ce [v] i c [ma] 690a 460a 260a 160a 80a 18a 940a 810a 575a 350a 50 60 70 80 90 100 110 120 0.1 1 10 100 1000 i c [ma] h fe
bfp650 electrical characteristics data sheet 18 revision 1.1, 2012-09-13 figure 5-4 collector current vs. base emitter voltage i c = f ( v be ), v ce = 2 v figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v 0.01 0.1 1 10 100 1000 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v be [v] i c [ma] 0.0001 0.001 0.01 0.1 1 10 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v be [v] i b [ma]
bfp650 electrical characteristics data sheet 19 revision 1.1, 2012-09-13 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 0.8 1 1.2 1.4 1.6 1.8 2 v eb [v] i b [a]
bfp650 electrical characteristics data sheet 20 revision 1.1, 2012-09-13 5.5 characteristic ac diagrams figure 5-7 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter in v figure 5-8 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 35 40 45 i c [ma] f t [ghz] 4.00v 3.00v 2.50v 2.00v 1.00v 0 20 40 60 80 100 120 140 160 180 18 20 22 24 26 28 30 32 i c [ma] oip 3 [dbm] 3v, 2.4ghz 4v, 2.4ghz 3v, 3.5ghz 4v, 3.5ghz
bfp650 electrical characteristics data sheet 21 revision 1.1, 2012-09-13 figure 5-9 collector base capacitance c ccb = f ( v cb ), f = 1 mhz figure 5-10 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 70 ma 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.1 0.2 0.3 0.4 0.5 0.6 v cb [v] c cb [pf] 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 f [ghz] g [db] g ms g ma |s 21 | 2
bfp650 electrical characteristics data sheet 22 revision 1.1, 2012-09-13 figure 5-11 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz figure 5-12 maximum power gain g max = f ( v ce ), i c = 70 ma, f = parameter in ghz 0 20 40 60 80 100 120 140 160 180 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 i c [ma] g [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 v ce [v] g [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz
bfp650 electrical characteristics data sheet 23 revision 1.1, 2012-09-13 figure 5-13 input matching s 11 = f ( f ), v ce = 3 v, i c = 30 / 70 ma figure 5-14 source impedance for minimum noise figure opt = f ( f ), v ce = 3 v, i c = 30 / 70 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 to 10 ghz 1 2 3 4 5 6 7 8 9 10 70 ma 30 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.45ghz 0.9ghz 1.9ghz 2.4ghz 3.5ghz i c = 30ma i c = 70ma
bfp650 electrical characteristics data sheet 24 revision 1.1, 2012-09-13 figure 5-15 output matching s 22 = f ( f ), v ce = 3 v, i c = 30 / 70 ma figure 5-16 noise figure nf min = f ( f ), v ce = 3 v, i c = 30 / 70 ma, z s = z opt 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 to 10 ghz 1 2 3 4 5 6 7 8 9 10 70 ma 30 ma 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 f [ghz] nfmin [db] i c = 30ma i c = 70ma
bfp650 electrical characteristics data sheet 25 revision 1.1, 2012-09-13 figure 5-17 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt = parameter in ghz figure 5-18 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i c [ma] nfmin [db] f = 0.45ghz f = 0.9ghz f = 1.9ghz f = 2.4ghz f = 3.5ghz 0 20 40 60 80 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 i c [ma] nf50 [db] f = 0.45ghz f = 0.9ghz f = 1.9ghz f = 2.4ghz f = 3.5ghz
bfp650 electrical characteristics data sheet 26 revision 1.1, 2012-09-13 figure 5-19 comparison noise figure nf 50 / nf min = f ( i c ), v ce = 3 v, f = 2.4 ghz note: the curves shown in this chapter have been generate d using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. t a = 25 c. 0 20 40 60 80 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 i c [ma] nf [db] z s = z sopt z s = 50
bfp650 simulation data data sheet 27 revision 1.1, 2012-09-13 6 simulation data for the spice gummel poon (gp) model as well as fo r the s-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the bfp650 spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very quickly and conveniently. the model already contains the package parasitic and is ready to use for dc- and high frequency simulations. th e terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the bfp650 spice gp model reflects the typical dc- and rf-performance within the limitations which are given by the spice gp model itself.
bfp650 package information sot343 data sheet 28 revision 1.1, 2012-09-13 7 package information sot343 figure 7-1 package outline figure 7-2 package footprint figure 7-3 marking example (marking bfp650: r5s) figure 7-4 tape dimensions sot343-po v08 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 3 2 4 1 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.6 sot343-fp v08 0.8 1.6 1.15 0.9 xys 56 date code (ym) 2005, june type code manufacturer pin 1 sot323-tp v02 0.2 4 2.15 8 2.3 1.1 pin 1
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